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MQW Electroabsorption Optical Gates for WDM Switching Systems
Mari KOIZUMI Tatemi IDO
IEICE TRANSACTIONS on Electronics
Publication Date: 1998/08/25
Print ISSN: 0916-8516
Type of Manuscript: INVITED PAPER (Special Issue on High-Capacity WDM/TDM Networks)
WDM, electroabsorption gate, optical cell buffer, polarization-dependent, wavelength-dependent, extinction ratio, switching speed,
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We have developed a multiple quantum well (MQW) electroabsorption (EA) modulator for wavelength-division multiplexing (WDM) switching systems. The fabricated MQW EA gate has low polarization and wavelength-dependent loss and high extinction ratio within the wavelength range of 1545 to 1560 nm. And by using this gate ultra-high-speed switching is achieved for WDM signals. Moreover, we optimize the EA gate for the full gain-band of an erbium-doped fiber amplifier (EDFA)(1535 to 1560 nm). This EA gate provides low polarization-dependent loss, higher extinction ratio, and high saturation input power in the wider wavelength range. These MQW EA gates will play an important role in future WDM switching systems.