MQW Electroabsorption Optical Gates for WDM Switching Systems

Mari KOIZUMI  Tatemi IDO  

IEICE TRANSACTIONS on Electronics   Vol.E81-C   No.8   pp.1232-1236
Publication Date: 1998/08/25
Online ISSN: 
Print ISSN: 0916-8516
Type of Manuscript: INVITED PAPER (Special Issue on High-Capacity WDM/TDM Networks)
WDM,  electroabsorption gate,  optical cell buffer,  polarization-dependent,  wavelength-dependent,  extinction ratio,  switching speed,  

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We have developed a multiple quantum well (MQW) electroabsorption (EA) modulator for wavelength-division multiplexing (WDM) switching systems. The fabricated MQW EA gate has low polarization and wavelength-dependent loss and high extinction ratio within the wavelength range of 1545 to 1560 nm. And by using this gate ultra-high-speed switching is achieved for WDM signals. Moreover, we optimize the EA gate for the full gain-band of an erbium-doped fiber amplifier (EDFA)(1535 to 1560 nm). This EA gate provides low polarization-dependent loss, higher extinction ratio, and high saturation input power in the wider wavelength range. These MQW EA gates will play an important role in future WDM switching systems.