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Wide-Wavelength-Range Modulator-Integrated DFB Laser Diodes Fabricated on a Single Wafer
Masayuki YAMAGUCHI Koji KUDO Hiroyuki YAMAZAKI Masashige ISHIZAKA Tatsuya SASAKI
IEICE TRANSACTIONS on Electronics
Publication Date: 1998/08/25
Print ISSN: 0916-8516
Type of Manuscript: INVITED PAPER (Special Issue on High-Capacity WDM/TDM Networks)
Category: Active Devices for Photonic Networks
distributed feedback laser diode, WDM, grating, EB lithography, optical modulator, MOVPE,
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Different-wavelength distributed feedback laser diodes with integrated modulators (DFB/MODs) are fabricated on a single wafer operate at wavelengths from 1. 52 µm to 1. 59 µm, a range comparable to the expanded Er-doped fiber amplifier gain band. A newly developed field-size-variation electron-beam lithography enables grating pitch to be controlled to within 0. 0012 nm, and narrow-stripe selective metal-organic vapor-phase epitaxy is used to control the bandgap wavelength of laser active layers and modulator absorption layers for each channel. The channel spacing of fabricated 40-channel DFB/MODs is 214 GHz in average with a standard deviation of 0. 39 nm. Very uniform lasing and modulating performances are achieved, such as threshold currents about 10 mA and extinction ratios about 20 dB at -2 V in average. These devices have been used to demonstrate 2. 5-Gb/s transmission over 600 km of a normal fiber with a power penalty of less than 1 dB.