Development of Transparent Alkylsulfonium Salt as a Photoacid Generator for ArF Excimer Laser Lithography

Kaichiro NAKANO  Katsumi MAEDA  Shigeyuki IWASA  Etsuo HASEGAWA  

Publication
IEICE TRANSACTIONS on Electronics   Vol.E81-C   No.7   pp.1045-1050
Publication Date: 1998/07/25
Online ISSN: 
DOI: 
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Issue on Organic Materials for Optics and Electronics)
Category: 
Keyword: 
photochemical acid-generator,  chemically amplified resist,  ArF excimer laser,  lithography,  

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Summary: 
A series of transparent photochemical acid-generators (PAGs) has been successfully prepared and investigated to apply ArF excimer-laser lithography. These PAGs were synthesized as new alkylsulfonium salts that have cycloalkyl groups but no aromatic ones. They were almost transparent at 193. 4 nm and have high acid-generation efficiency enough to use for ArF excimer-laser resists. The photochemical reaction of these alkylsulfonium salts occurs mainly due to the S-C bond fission. A resist utilizing the PAGs was capable to resolve a 0. 2µm L/S pattern at a 50-mJ/cm2 dose with an aqueous alkaline developer. These PAGs are promising materials for use in ArF excimer-laser lithography.