0. 012-cc Miniaturized GaAs P-Pocket Power MESFET Amplifier Operating with a Single Voltage Supply for PHS Applications

Masami NAGAOKA  Hironori NAGASAWA  Katsue K. KAWAKYU  Kenji HONMYO  Shinji ISHIDA  Yoshiaki KITAURA  Naotaka UCHITOMI  

IEICE TRANSACTIONS on Electronics   Vol.E81-C   No.6   pp.985-992
Publication Date: 1998/06/25
Online ISSN: 
Print ISSN: 0916-8516
Type of Manuscript: PAPER
Category: Microwave and Millimeter Wave Technology
power amplifier,  gallium arsenide,  PHS,  low distortion,  single voltage supply,  surface mount package,  

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A GaAs power amplifier IC has been developed for 1. 9-GHz digital mobile communication applications, such as the handsets of the Japanese personal handy phone system (PHS), which was assembled into a very small 0. 012-cc surface mount plastic package. This power amplifier using refractory WNx/W self-aligned gate MESFETs with p-pocket layers can operate with high efficiency and low distortion with a single 3-V supply. A very low dissipated current of 119 mA was obtained with an output power of 21. 1 dBm and a low 600-kHz adjacent channel leakage power (ACP) of -63 dBc for π/4-shifted quadrature phase shift keying (QPSK) modulated input.