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0. 012-cc Miniaturized GaAs P-Pocket Power MESFET Amplifier Operating with a Single Voltage Supply for PHS Applications
Masami NAGAOKA Hironori NAGASAWA Katsue K. KAWAKYU Kenji HONMYO Shinji ISHIDA Yoshiaki KITAURA Naotaka UCHITOMI
IEICE TRANSACTIONS on Electronics
Publication Date: 1998/06/25
Print ISSN: 0916-8516
Type of Manuscript: PAPER
Category: Microwave and Millimeter Wave Technology
power amplifier, gallium arsenide, PHS, low distortion, single voltage supply, surface mount package,
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A GaAs power amplifier IC has been developed for 1. 9-GHz digital mobile communication applications, such as the handsets of the Japanese personal handy phone system (PHS), which was assembled into a very small 0. 012-cc surface mount plastic package. This power amplifier using refractory WNx/W self-aligned gate MESFETs with p-pocket layers can operate with high efficiency and low distortion with a single 3-V supply. A very low dissipated current of 119 mA was obtained with an output power of 21. 1 dBm and a low 600-kHz adjacent channel leakage power (ACP) of -63 dBc for π/4-shifted quadrature phase shift keying (QPSK) modulated input.