Single Low 2. 4-V Supply Operation GaAs Power MESFET Amplifier with Low-Distortion Gain-Variable Attenuator for 1. 9-GHz PHS Applications

Masami NAGAOKA
Hirotsugu WAKIMOTO
Toshiki SESHITA
Katsue K. KAWAKYU
Yoshiaki KITAURA
Atsushi KAMEYAMA
Naotaka UCHITOMI

Publication
IEICE TRANSACTIONS on Electronics   Vol.E81-C    No.6    pp.911-915
Publication Date: 1998/06/25
Online ISSN: 
DOI: 
Print ISSN: 0916-8516
Type of Manuscript: Special Section LETTER (Special Issue on Microwave and Millimeter-Wave Module Technology)
Category: 
Keyword: 
power amplifier,  gallium arsenide,  PHS,  low distortion,  variable gain,  single voltage supply,  

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Summary: 
A GaAs power MESFET amplifier with a low-distortion, 10-dB gain-variable attenuator has been developed for 1. 9-GHz Japanese personal handy phone system (PHS). Independently of its gain, a very low 600-kHz adjacent channel leakage power (ACP) with sufficient output power was attained. In single low 2. 4-V supply operation, an output power of 21. 1 dBm, a low dissipated current of 157 mA and a high power-added efficiency (PAE) of 37. 2% were obtained with an ACP of -55 dBc.