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Single Low 2. 4-V Supply Operation GaAs Power MESFET Amplifier with Low-Distortion Gain-Variable Attenuator for 1. 9-GHz PHS Applications
Masami NAGAOKA Hirotsugu WAKIMOTO Toshiki SESHITA Katsue K. KAWAKYU Yoshiaki KITAURA Atsushi KAMEYAMA Naotaka UCHITOMI
IEICE TRANSACTIONS on Electronics
Publication Date: 1998/06/25
Print ISSN: 0916-8516
Type of Manuscript: Special Section LETTER (Special Issue on Microwave and Millimeter-Wave Module Technology)
power amplifier, gallium arsenide, PHS, low distortion, variable gain, single voltage supply,
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A GaAs power MESFET amplifier with a low-distortion, 10-dB gain-variable attenuator has been developed for 1. 9-GHz Japanese personal handy phone system (PHS). Independently of its gain, a very low 600-kHz adjacent channel leakage power (ACP) with sufficient output power was attained. In single low 2. 4-V supply operation, an output power of 21. 1 dBm, a low dissipated current of 157 mA and a high power-added efficiency (PAE) of 37. 2% were obtained with an ACP of -55 dBc.