Single 1. 5 V Operation Power Amplifier MMIC with SrTiO3 Capacitors for 2. 4 GHz Wireless Applications

Takeshi B. NISHIMURA  Naotaka IWATA  Keiko YAMAGUCHI  Masatoshi TOMITA  Yasunori BITO  Koichi TAKEMURA  Yoichi MIYASAKA  

IEICE TRANSACTIONS on Electronics   Vol.E81-C   No.6   pp.898-903
Publication Date: 1998/06/25
Online ISSN: 
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Issue on Microwave and Millimeter-Wave Module Technology)
Category: Semiconductor Devices and Amplifiers
wireless LAN,  MMIC,  power amplifier,  heterojunction FET,  SrTiO3,  low voltage,  single voltage supply,  

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This paper describes design approach and power performance of a single 1. 5 V operation two-stage power amplifier MMIC for 2. 4 GHz wireless local area network applications. The MMIC with 0. 760. 96 mm2 area includes SrTiO3 (STO) capacitors with a high capacitance density of 8. 0 fF/µm2 and double-doped AlGaAs/InGaAs/AlGaAs heterojunction FETs with a shallow threshold voltage of -0. 24 V. Utilizing a series STO capacitor and a shunt inductor as an output matching circuit, the total chip size was reduced by 40% as compared with an MMIC utilizing SiNx capacitors. Under single 1.5 V operation, the developed MMIC delivered an output power of 110 mW (20.4 dBm) and a power-added efficiency (PAE) of 36.7% with an associated gain of 20.0 dB at 2.4 GHz. Even operated at a drain bias voltage of 0.8 V, the MMIC exhibited a high PAE of 31.0%.