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A High Power and Low Distortion Amplifier Module for Large Cell Base Station in Digital Cordless System
Morio NAKAMURA Masahiro MAEDA Shigeru MORIMOTO Hiroyuki MASATO Yukio NAKAMURA Yorito OTA
Publication
IEICE TRANSACTIONS on Electronics
Vol.E81-C
No.6
pp.886-891 Publication Date: 1998/06/25 Online ISSN:
DOI: Print ISSN: 0916-8516 Type of Manuscript: Special Section PAPER (Special Issue on Microwave and Millimeter-Wave Module Technology) Category: Semiconductor Devices and Amplifiers Keyword: GaAs, power module, high power, low distortion, power divider/combiner,
Full Text: PDF(609.8KB)>>
Summary:
A high power amplifier module has been developed for large cell base station in digital cordless system. For PHS application, this module exhibited Pout of 38 dBm with low ACP of -72 dBc (at 600 kHz offset point) and a power gain of 33 dB at a supply voltage of 9 V and a frequency range of 1890-1923 MHz. In order to realize this ultra low distortion performance, power FETs have been designed as considering high breakdown voltage and thermal stability. Power divider/combiner circuits, which have the advantages of low transmission loss and a function of controlling second harmonic, have been introduced. Moreover, a novel module package with features of low cost and good processing precision has been proposed.
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