0. 1 µm-Gate InGaP/InGaAs HEMT Technology for Millimeter-Wave Applications

Naoki HARADA  Tamio SAITO  Hideyuki OIKAWA  Yoji OHASHI  Yuji AWANO  Masayuki ABE  Kohki HIKOSAKA  

IEICE TRANSACTIONS on Electronics   Vol.E81-C    No.6    pp.876-881
Publication Date: 1998/06/25
Online ISSN: 
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Issue on Microwave and Millimeter-Wave Module Technology)
Category: Semiconductor Devices and Amplifiers
mm-wave,  MMIC,  HEMT,  InGaP,  low noise amplifier,  

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This paper describes our new technology for creating a highly productive 0. 1 µm gate InGaP/InGaAs HEMT with a GaAs substrate for a millimeter-wave MMIC. We applied a phase-shifting photo lithographic technique and sidewall deposition/etching process to fabricate a 0. 1 µm gate electrode. The fabricated HEMTs showed excellent high-frequency performance; An MSG exceeding 10 dB at 60 GHz. We also fabricated a 60 GHz band, four-stage low-noise amplifier MMIC and demonstrated its superior performance (Gain= 27 dB and NF= 3. 1 dB @61 GHz). These results strongly suggest that our InGaP/InGaAs HEMTs technologies are highly applicable for millimeter-wave applications.