Symmetric and Asymmetric InGaP/InGaAs/GaAs Heterostructure MESFETs and Their Application to V-Band Amplifiers

Kiyomitsu ONODERA  Kazumi NISHIMURA  Takumi NITTONO  Yasuro YAMANE  Kimiyoshi YAMASAKI  

IEICE TRANSACTIONS on Electronics   Vol.E81-C   No.6   pp.868-875
Publication Date: 1998/06/25
Online ISSN: 
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Issue on Microwave and Millimeter-Wave Module Technology)
Category: Semiconductor Devices and Amplifiers
GaAs,  MESFET,  V-band amplifier,  

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Self-aligned T-shaped Au/WSiN gate i-InGaP/n-InGaAs/i-GaAs heterostructure MESFETs with a BP-LDD structure were developed for application to microwave and millimeter-wave communication systems. Owing to the use of tilted-angle n+-ion-implantation, symmetric and asymmetric structures FETs can be fabricated on the same chip and low noise, high breakdown voltage, and high power gain can be attained simultaneously. The fabricated symmetric FETs, with a gate length of 0. 13 µm, exhibit a current cutoff frequency of more than 70 GHz and a minimum noise figure as low as 1. 0 dB at 20 GHz, while the gate-drain breakdown voltage is more than 8 V and the MSG is as high as 7. 8 dB at 60 GHz in the asymmetric FETs on the same chip. V-band MMIC amplifiers fabricated using symmetric FETs exhibit a gain of more than 9 dB and a noise figure of 6 dB over the 50 to 60 GHz frequency range.