A 2-V Operation Resonant-Type T/R-Switch with Low Distortion Characteristics for 1. 9-GHz PHS

Katsue K. KAWAKYU  Yoshiko IKEDA  Masami NAGAOKA  Atsushi KAMEYAMA  Naotaka UCHITOMI  

IEICE TRANSACTIONS on Electronics   Vol.E81-C   No.6   pp.862-867
Publication Date: 1998/06/25
Online ISSN: 
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Issue on Microwave and Millimeter-Wave Module Technology)
Category: Functional Modules and the Design Technology
resonant-type,  T/R-switch,  low distortion,  PHS,  2-V operation,  

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Two approaches to the design of resonant-type switches with low distortion characteristics operating at a 2-V power supply voltage have been proposed for use in the 1. 9-GHz-band personal handy phone system (PHS). One approach is to use three stacked FETs at the receiver side. They are composed of a dual-gate FET and a single-gate FET. An insertion loss of 0. 41 dB and an isolation of 44. 0 dB were obtained at 1. 9 GHz. A third-order distortion value of -52 dBc was achieved at 19 dBm output power. Another approach is to insert a capacitor in the resonator. A third-order distortion of -49 dBc at 19-dBm output power when two stacked FETs were used at the receiver side. The layout area of the resonator is drastically reduced as compared with the above-mentioned case.