Miniaturized Front-End HIC Using MBB Technology for Mobile Communication Equipment

Junji ITOH  Tadayoshi NAKATSUKA  Takayuki YOSHIDA  Mitsuru NISHITSUJI  Tomoya UDA  Osamu ISHIKAWA  

IEICE TRANSACTIONS on Electronics   Vol.E81-C   No.6   pp.834-840
Publication Date: 1998/06/25
Online ISSN: 
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Issue on Microwave and Millimeter-Wave Module Technology)
Category: Functional Modules and the Design Technology
mobile communication,  front-end,  down-converter,  GaAs,  hybrid IC,  

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Highly miniaturization technology in front-end GaAs Hybrid IC for mobile communication equipment will be presented. A combination of MBB (micro bump bonding) technology and the new GaAs IC fabrication process using high dielectric constant (εr) thin film technology has achieved a super small HIC with low cost and low power consumption. The new HIC was constructed of only a ceramic substrate in which the spiral inductors were formed on it and the GaAs IC chip that was bonded by using MBB technology. The MBB technology lead the HIC to a lower temperature process without soldering, a smaller bump diameter, at shorter intervals and the lowest parasitic in the bump. The advantage of the small bonding pad of the IC contributes to miniaturize the IC chip and reduces the chip cost. The GaAs IC process technology using high-εr thin film achieves the integration of all capacitors in the IC without increasing the chip size. Furthermore, low power consumption was achieved by 0. 5-µm LDD BP-MESFET with a high k-value. Although capacitors were integrated on the IC, all of the inductors were formed on the top of the ceramic substrate using a thin film metal process. This was used due to its large occupation area when it was integrated on the IC, and produced a low Q-factor. As a results, the chip was minimized to a size of 0. 81. 0 mm2 and achieved a low-cost chip. Two types of HICs were fabricated for 880 MHz cellular band and 1. 9 GHz PHS (Personal Handy phone System) band. The HIC at 880 MHz measures only 5. 05. 01. 0 mm3, and offered a conversion gain of 25 dB, a noise figure of 4. 2 dB and an image rejection ratio of 12 dB at 2. 7 V and at a power supply of 3. 5 mA. The HIC for 1. 9 GHz measures only 3. 54. 01. 0 mm3, and showed a conversion gain of 16. 0 dB, a II P3 of -16. 0 dBm, and an image rejection ratio of over 20 dBc at 3. 0 V and at power supply of 4. 5 mA.