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Preparation of Ferroelectric Sr0. 7Bi2. 3Ta2O9 Thin Films by Misted Deposition Method Using Alkoxide Solution
Ichiro KOIWA Yukihisa OKADA Juro MITA
IEICE TRANSACTIONS on Electronics
Publication Date: 1998/04/25
Print ISSN: 0916-8516
Type of Manuscript: Special Section LETTER (Special Issue on Advanced Memory Devices Using High-Dielectric-Constant and Ferroelectric Thin Films)
ferroelectric memory, SrBi2Ta2O9 thin film, misted deposition method, alkoxide solution,
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Sr0. 7Bi2. 3Ta2O9(SBT) films are drawing attention as fatigue-free materials. We prepared an SBT film containing discontinuous crystals in the Bi-layered compound using a misted deposition method. In comparison to films prepared by the spin-on method, leakage current was low and spontaneous polarization is high but saturation performance was low. The low saturation performance seems attributable to the inclusion of discontinuous crystals in the Bi-layered compound, while the low leakage current may be explained by the films smaller, denser particles, which form a film without voids, resulting in higher uniformity. The misted deposition method has advantages of finer grain size and higher uniformity.