For Full-Text PDF, please login, if you are a member of IEICE,|
or go to Pay Per View on menu list, if you are a nonmember of IEICE.
Properties of Ferroelectric Memory with Ir System Materials as Electrodes
Naoki IZUMI Yoshikazu FUJIMORI Takashi NAKAMURA Akira KAMISAWA
IEICE TRANSACTIONS on Electronics
Publication Date: 1998/04/25
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Issue on Advanced Memory Devices Using High-Dielectric-Constant and Ferroelectric Thin Films)
ferroelectric thin films, Pb(Zr,Ti)O3, FRAM, fatigue property, imprint property, hysteresis, sol-gel method, Ir system materials, STC, poly-Si plugs,
Full Text: PDF>>
Pb(ZrxTi1-x)O3 (PZT) thin films were prepared on various electrodes. When Ir system materials were used as electrodes, fatigue properties of PZT thin films were improved. Moreover, in the case of the PZT thin film on an Ir/IrO2 electrode, not only fatigue but imprint properties were clearly improved. We could find these improvements were caused by good barrier effect of IrO2 from secondary ion mass spectroscopy (SIMS) analysis. By applying these Ir system electrodes, we fabricated stacked capacitors on polycrystalline silicon (poly-Si) plugs. In spite of high temperature thermal processing, we found poly-Si plugs were ohmically connected with the bottom electrodes of the capacitors from hysteresis measurements and I-V characteristics, and could greatly expect them for practical use.