Ferroelectric Memory Circuit Technology and the Application to Contactless IC Card

Koji ASARI  Hiroshige HIRANO  Toshiyuki HONDA  Tatsumi SUMI  Masato TAKEO  Nobuyuki MORIWAKI  George NAKANE  Tetsuji NAKAKUMA  Shigeo CHAYA  Toshio MUKUNOKI  Yuji JUDAI  Masamichi AZUMA  Yasuhiro SHIMADA  Tatsuo OTSUKI  

Publication
IEICE TRANSACTIONS on Electronics   Vol.E81-C   No.4   pp.488-496
Publication Date: 1998/04/25
Online ISSN: 
DOI: 
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Issue on Advanced Memory Devices Using High-Dielectric-Constant and Ferroelectric Thin Films)
Category: 
Keyword: 
FeRAM,  high speed,  low voltage,  low power consumption,  non-volatile,  contactless IC card,  

Full Text: PDF>>
Buy this Article




Summary: 
Ferroelectric non-volatile memory (FeRAM) has been inspiring interests since bismuth layer perovskite material family was found to provide "Fatigue Free" endurance, superior retention and imprint characteristics. In this paper, we will provide new circuits technology for FeRAM developed to implement high speed operation, low voltage operation and low power consumption. Performance of LSI embedded with FeRAM for contactless IC card is also provided to demonstrate the feasibility of the circuit technology.