Summary
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Ferroelectric Memory Circuit Technology and the Application to Contactless IC Card Koji ASARI Hiroshige HIRANO Toshiyuki HONDA Tatsumi SUMI Masato TAKEO Nobuyuki MORIWAKI George NAKANE Tetsuji NAKAKUMA Shigeo CHAYA Toshio MUKUNOKI Yuji JUDAI Masamichi AZUMA Yasuhiro SHIMADA Tatsuo OTSUKI Publication IEICE TRANSACTIONS on Electronics Vol.E81-C No.4 pp.488-496 Publication Date: 1998/04/25 Online ISSN: DOI: Print ISSN: 0916-8516 Type of Manuscript: Special Section PAPER (Special Issue on Advanced Memory Devices Using High-Dielectric-Constant and Ferroelectric Thin Films) Category: Keyword: FeRAM, high speed, low voltage, low power consumption, non-volatile, contactless IC card, Full Text: PDF>>
Summary: Ferroelectric non-volatile memory (FeRAM) has been inspiring interests since bismuth layer perovskite material family was found to provide "Fatigue Free" endurance, superior retention and imprint characteristics. In this paper, we will provide new circuits technology for FeRAM developed to implement high speed operation, low voltage operation and low power consumption. Performance of LSI embedded with FeRAM for contactless IC card is also provided to demonstrate the feasibility of the circuit technology. | |||||
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