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A Stochastic Associative Memory Using Single-Electron Tunneling Devices
Makoto SAEN Takashi MORIE Makoto NAGATA Atsushi IWATA
IEICE TRANSACTIONS on Electronics
Publication Date: 1998/01/25
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Issue on Technology Challenges for Single Electron Devices)
associative memory, single-electron tunneling, SET, single-electron transistor,
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This paper proposes a new associative memory architecture using stochastic behavior in single electron tunneling (SET) devices. This memory stochastically extracts the pattern most similar to the input key pattern from the stored patterns in two matching modes: the voltage-domain matching mode and the time-domain one. In the former matching mode, ordinary associative memory operation can be performed. In the latter matching mode, a purely stochastic search can be performed. Even in this case, by repeating numerous searching trials, the order of similarity can be obtained. We propose a circuit using SET devices based on this architecture and demonstrate its basic operation with a simulation. By feeding the output pattern back to the input, this memory retrieves slightly dissimilar patterns consecutively. This function may be the key to developing highly intelligent information processing systems close to the human brain.