SOI Waveguide GeSi Avalanche Pin Photodetector at 1. 3 µm Wavelength

Tomomi YOSHIMOTO  Shawn G. THOMAS  Kang L. WANG  Bahram JALALI  

IEICE TRANSACTIONS on Electronics   Vol.E81-C   No.10   pp.1667-1669
Publication Date: 1998/10/25
Online ISSN: 
Print ISSN: 0916-8516
Type of Manuscript: LETTER
Category: Semiconductor Materials and Devices
photodetector,  GeSi,  superlattice,  SOI waveguide,  avalanche gain,  

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A GeSi avalanche photodetector grown on a silicon-on-insulator (SOI) passive waveguide is demonstrated. The absorption layer of the detector consisits of alternating layers of 66 Ge0. 44Si0. 56 and 480 Si on SOI substrate. The thick SOI waveguide couples the light from an optical fiber into the GeSi/Si strain-limited thin absorption region. The detector exhibits low dark current, sharp breakdown and an external responsivity of 0. 2 A/W at 1. 3 µm wavelength.