Electrical Properties of YBa2Cu3Ox Films Grown by Liquid Phase Epitaxy

Sadahiko MIURA  Kenji HASHIMOTO  Jian-Guo WEN  Katumi SUZUKI  Tadataka MORISHITA  

IEICE TRANSACTIONS on Electronics   Vol.E81-C   No.10   pp.1549-1556
Publication Date: 1998/10/25
Online ISSN: 
Print ISSN: 0916-8516
Type of Manuscript: INVITED PAPER (Special Issue on Low- and High-Temperature Superconductive Electron Devices and Their Applications)
Category: High-Frequency Properties of Thin Films
liquid phase epitaxy,  surface resistance,  resonator,  intermodulation,  YBa2Cu3Ox,  

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YBa2Cu3Ox films were grown on MgO(100) substrates by liquid phase epitaxy. Their structural and electrical properties were examined. From TEM plan-view images, it is found that the film consists of large grains whose misorientation angles are less than 1. Although the DC critical current density values decrease with increasing the film thickness, the critical current density value of 9. 3105 A/cm2 at 77 K is obtained for a 7 µm-thick film. A microstrip resonator at 10. 8 GHz with a YBCO ground plane shows Q0 values of 14200 at 77 K and 23300 at 40 K, which correspond to surface resistance values of 650 and 400 µΩ, respectively. By using a microstrip line resonator with a Ti/Au ground plane, the critical field of the film at 77 K and 10. 8 GHz is estimated to be 30 Oe. The third-order intercept of the resonator with the Ti/Au ground plane is the input power of +43 dBm and the output power of +30 dBm at 77 K.