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A 1. 5 GHz CMOS Low Noise Amplifier
Ryuichi FUJIMOTO Shoji OTAKA Hiroshi IWAI Hiroshi TANIMOTO
IEICE TRANSACTIONS on Fundamentals of Electronics, Communications and Computer Sciences
Publication Date: 1998/03/25
Print ISSN: 0916-8508
Type of Manuscript: Special Section PAPER (Special Section of Selected Papers from the 10th Karuizawa Workshop on Circuits and Systems)
low noise amplifier, CMOS technology, short channel, inductor, high frequency circuit,
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A 1. 5 GHz low noise amplifier (LNA) was designed and fabricated by using CMOS technology. The measured associated gain (Ga) of the LNA is 13. 8 dB, the minimum noise figure (NFmin) is 2. 9 dB and the input-referred third-order intercept point (IIP3) is -2. 5 dBm at 1. 5 GHz. The LNA consumes 8. 6 mA from a 3. 0 V supply voltage. These measured results indicate a potential of short channel MOSFETs for high-frequency and low-noise applications.