Neuron-MOSVT Cancellation Circuit and Its Application to a Low-Power and High-Swing Cascode Current Mirror

Koichi TANNO  Jing SHEN  Okihiko ISHIZUKA  Zheng TANG  

Publication
IEICE TRANSACTIONS on Fundamentals of Electronics, Communications and Computer Sciences   Vol.E81-A   No.1   pp.110-116
Publication Date: 1998/01/25
Online ISSN: 
DOI: 
Print ISSN: 0916-8508
Type of Manuscript: PAPER
Category: Analog Signal Processing
Keyword: 
neuron-MOS transistor,  threshold voltage,  CMOS analog circuit,  circuit theory and design,  integrated circuit,  

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Summary: 
In this paper, a threshold voltage (VT) cancellation circuit for neuron-MOS (νMOS) analog circuits is described. By connecting the output terminal of this circuit with one of the input terminals of the νMOS transistor, cancellation ofVT is realized. The circuit has advantages of ground-referenced output and is insensitive to the fluctuation of bias and supply voltages. Second-order effects, such as the channel length modulation effect, the mobility reduction effect and device mismatch of the proposed circuit are analyzed in detail. Low-power and high-swing νMOS cascode current mirror is presented as an application. Performance of the proposed circuits is confirmed by HSPICE simulation with MOSIS 2. 0 µ p-well double-poly and double-metal CMOS device parameters.