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Neuron-MOSVT Cancellation Circuit and Its Application to a Low-Power and High-Swing Cascode Current Mirror
IEICE TRANSACTIONS on Fundamentals of Electronics, Communications and Computer Sciences
Publication Date: 1998/01/25
Print ISSN: 0916-8508
Type of Manuscript: Category: Analog Signal Processing
neuron-MOS transistor, threshold voltage, CMOS analog circuit, circuit theory and design, integrated circuit,
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In this paper, a threshold voltage (VT) cancellation circuit for neuron-MOS (νMOS) analog circuits is described. By connecting the output terminal of this circuit with one of the input terminals of the νMOS transistor, cancellation ofVT is realized. The circuit has advantages of ground-referenced output and is insensitive to the fluctuation of bias and supply voltages. Second-order effects, such as the channel length modulation effect, the mobility reduction effect and device mismatch of the proposed circuit are analyzed in detail. Low-power and high-swing νMOS cascode current mirror is presented as an application. Performance of the proposed circuits is confirmed by HSPICE simulation with MOSIS 2. 0 µ p-well double-poly and double-metal CMOS device parameters.