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Ultra-Low Power Two-MOS Virtual-Short Circuit and Its Application
Koichi TANNO Okihiko ISHIZUKA Zheng TANG
IEICE TRANSACTIONS on Fundamentals of Electronics, Communications and Computer Sciences
Publication Date: 1998/10/25
Print ISSN: 0916-8508
Type of Manuscript: PAPER
Category: Analog Signal Processing
virtual-short, weak-inversion region, low power, low voltage, CMOS analog circuit, integrated circuit,
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In this paper, a virtual-short circuit which consists of only two MOS transistors operated in the weak-inversion region is proposed. It has the advantages of almost zero power consumption, low voltage operation, small chip area, and no needlessness of bias voltages or currents. The second order effects, such as the device mismatch, the Early effect, and the temperature dependency of the circuit are analyzed in detail. Next, current-controlled and voltage-controlled current sources using the proposed virtual-short circuit are presented as applications. The performance of the proposed circuits is estimated using SPICE simulation with MOSIS 1. 2 µm CMOS device parameters. The results are reported on this paper.