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Microstructural Characterization and Photoluminescence of SrGa2S4:Ce3+ Thin Films Grown by Deposition from Binary Vapors
Oleg DJAZOVSKI Tomohisa MIKAMI Koutoku OHMI Shosaku TANAKA Hiroshi KOBAYASHI
IEICE TRANSACTIONS on Electronics
Publication Date: 1997/08/25
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Issue on Advanced Emissive Displays)
SrGa2S4:Ce3+, thin film, microstructure, photoluminescence, decay time,
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Detailed investigations of the microstructural properties of SrGa2S4:Ce3+ thin films grown by deposition from binary vapors (DBV) were carried out by X-ray diffraction analysis (XRD), energy dispersive X-ray diffraction measurements (EDX), electron probe microanalysis (EPMA), and X-ray photoelectron spectroscopy (XPS) depth profiling. The results indicate uniform distribution of the constituent elements in the nearly stoichiometric structure of the thin films. Photoluminescence (PL) data including absorption and luminescence spectra in the temperature range of 10 to 300 K and decay characteristics show that an increase in Ce concentration from 0.2 to 3 mol% is accompanied with a marked increase in both the intensity of activator absorption and decay time, while the emission and excitation bands remain fixed in position. A mechanism involving the concentration-dependent interactions between different centers in the lattice is proposed, which may explain the experimentally observed behavior.