A Long Data Retention SOI DRAM with the Body Refresh Function

Shigeki TOMISHIMA  Fukashi MORISHITA  Masaki TSUKUDE  Tadato YAMAGATA  Kazutami ARIMOTO  

Publication
IEICE TRANSACTIONS on Electronics   Vol.E80-C   No.7   pp.899-904
Publication Date: 1997/07/25
Online ISSN: 
DOI: 
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Issue on New Concept Device and Novel Architecture LSIs)
Category: Novel Structure Devices
Keyword: 
memory,  SOI-DRAM,  body region,  refresh,  data retention,  

Full Text: PDF>>
Buy this Article



Summary: 
SOI (Silicon On Insulator) transistors have certain problems due to the floating body. These problems become remarkable in the memory cell transistors of DRAMs. We propose a new refresh function and circuits for SOI DRAMs. And we obtained the result that this refresh function removed the injected hole from the body region and gave stable body potential by the device simulation. Therefore we can realize the long data retention characteristics for SOI DRAMs without an increase of the memory cell area or an additional refresh operation.