SOI/CMOS Circuit Design for High-Speed Communication LSIs

Kimio UEDA  Yoshiki WADA  Takanori HIROTA  Shigenobu MAEDA  Koichiro MASHIKO  Hisanori HAMANO  

Publication
IEICE TRANSACTIONS on Electronics   Vol.E80-C   No.7   pp.886-892
Publication Date: 1997/07/25
Online ISSN: 
DOI: 
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Issue on New Concept Device and Novel Architecture LSIs)
Category: Novel Structure Devices
Keyword: 
multiplexer,  demultiplexer,  CMOS device,  SOI/CMOS device,  low-power,  high-speed,  

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Summary: 
This paper discusses the features of SOI/CMOS circuits in comparison with bulk/CMOS circuits. We have to design circuits with small fan outs and short wires to take advantage of high-speed and low-power SOI/CMOS devices to their fullest. We can take advantage of the SOI/CMOS structure if the ratio of the source/drain capacitances to the gate capacitances is much greater in the load capacitance. Thus, we propose a new flip-flop circuit with a smaller gate capacitance. The flip-flop circuit operates 30% faster than the previous circuit at 2.0 V. We also propose a buffer circuit having less delay disparity between the complementary output signals. The buffer circuit has the delay disparity of 18 ps at 0.2 pF and 2.0 V. We fabricated an 8-bit frequency divider and a 4-bit demultiplexer using the proposed circuits and 0.35 µm SOI/CMOS process. The 8-bit frequency divider and the 4-bit demultiplexer operate at 2.8 GHz and 1.6 GHz, respectively, at 2.0 V.