Proposal of a Schottky-Barrier SET Aiming at a Future Integrated Device

Minoru FUJISHIMA  Hironobu FUKUI  Shuhei AMAKAWA  Koichiro HOH  

Publication
IEICE TRANSACTIONS on Electronics   Vol.E80-C   No.7   pp.881-885
Publication Date: 1997/07/25
Online ISSN: 
DOI: 
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Issue on New Concept Device and Novel Architecture LSIs)
Category: Quantum Devices
Keyword: 
short channel device,  single electron,  Coulomb blockade,  

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Summary: 
The performances of an SET required for integration are discussed. Conventional SETs had several problems such as large leakage current, insufficient voltage gain and so on. To overcome these problems, a new SET utilizing Schottky barriers as tunnel junctions is proposed. Its current characteristics and Coulomb-blockade conditions are calculated and the effectiveness for an integrated device is discussed.