Device Parameter Estimation of SOI MOSFET Using One-Dimensional Numerical Simulation Considering Quantum Mechanical Effects

Rimon IKENO  Hiroshi ITO  Kunihiro ASADA  

Publication
IEICE TRANSACTIONS on Electronics   Vol.E80-C   No.6   pp.806-811
Publication Date: 1997/06/25
Online ISSN: 
DOI: 
Print ISSN: 0916-8516
Type of Manuscript: PAPER
Category: Electronic Circuits
Keyword: 
SOI MOSFET,  device simulation,  subthreshold characteristics,  quantum mechanical effects,  parameter fitting,  substrate bias,  

Full Text: PDF>>
Buy this Article




Summary: 
We have been studying on subthreshold characteristics of SOI (Silicon-On-Insulator) MOSFET's in terms of substrate bias dependence using a one-dimensional subthreshold device simulator based on Poisson equation in an SOI multilayer structure for estimating structural parameters of real devices. Here, we consider the quantum mechanical effects in the electron inversion layer of thin SOI MOSFET's, such as the two-dimensionally quantized electron states and transports, with a self-consistent solver of Poisson and Schrodinger equations and a mobility model by the relaxation time approximation. From results of simulations, we found a significant difference between this model and the classical model and concluded that the quantum mechanical effects need to be considered in analizing thin-film SOI devices.