For Full-Text PDF, please login, if you are a member of IEICE,|
or go to Pay Per View on menu list, if you are a nonmember of IEICE.
Improvement of Adjacent Channel Leakage Power and Intermodulation Distortion by Using a GaAs FET Linearizer with a Large Source Inductance
Kazutomi MORI Kazuhisa YAMAUCHI Masatoshi NAKAYAMA Yasushi ITOH Tadashi TAKAGI Hidetoshi KUREBAYASHI
IEICE TRANSACTIONS on Electronics
Publication Date: 1997/06/25
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Issue on Microwave and Millimeterwave High-power Devices)
microwave, amplifier, linearizer, intermodulation distortion, adjacent chamel leakage power,
Full Text: PDF(475.8KB)>>
This paper describes the design, fabrication, and performance of a GaAs FET linearizer with a large source inductance, focusing mainly on (a) a mechanism of positive gain and negative phase deviations for input power, (b) stability considerations, and (c) a dependence on load impedance. In addition, in an application to the linearized amplifier, it is shown that an improvement can be achieved for adjacent channel leakage power (ACP) and third order intermodulation distortion (IM3) with the use of the linearizer.