Improvement of Adjacent Channel Leakage Power and Intermodulation Distortion by Using a GaAs FET Linearizer with a Large Source Inductance

Kazutomi MORI  Kazuhisa YAMAUCHI  Masatoshi NAKAYAMA  Yasushi ITOH  Tadashi TAKAGI  Hidetoshi KUREBAYASHI  

IEICE TRANSACTIONS on Electronics   Vol.E80-C    No.6    pp.775-781
Publication Date: 1997/06/25
Online ISSN: 
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Issue on Microwave and Millimeterwave High-power Devices)
microwave,  amplifier,  linearizer,  intermodulation distortion,  adjacent chamel leakage power,  

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This paper describes the design, fabrication, and performance of a GaAs FET linearizer with a large source inductance, focusing mainly on (a) a mechanism of positive gain and negative phase deviations for input power, (b) stability considerations, and (c) a dependence on load impedance. In addition, in an application to the linearized amplifier, it is shown that an improvement can be achieved for adjacent channel leakage power (ACP) and third order intermodulation distortion (IM3) with the use of the linearizer.