Power Heterojunction FET with High Breakdown Voltage for X- and Ku-Band Applications

Yasuhiro OKAMOTO  Kohji MATSUNAGA  Mikio KANAMORI  Masaaki KUZUHARA  Yoichiro TAKAYAMA  

Publication
IEICE TRANSACTIONS on Electronics   Vol.E80-C   No.6   pp.746-750
Publication Date: 1997/06/25
Online ISSN: 
DOI: 
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Issue on Microwave and Millimeterwave High-power Devices)
Category: 
Keyword: 
heterojunction FET,  high breakdown voltage,  buried gate,  

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Summary: 
A buried gate AlGaAs/InGaAs heterojunction FET (HJFET) with gate breakdown voltage of 30 V was examined for high drain bias (higher than 10 V) operation. High breakdown voltage was realized due to the optimization of the narrow recess depth. A 1.4 mm HJFET has exhibited an output power of 30.2 dBm (1050 mW) with 50% power added efficiency (PAE) and 12.1 dB linear gain at 12 GHz with a 13 V drain bias. An internal matching circuit for a 16.8 mm HJFET was designed using a large-signal load impedance determined from load-pull measurement. The 16.8 mm internally-matched HJFET has delivered 38.9 dBm (7.8 W) output power with 46% PAE and 11.6 dB linear gain at 12 GHz with a drain bias of 13 V. This is the first report of higher than 10 V operation of an X- and Ku-band power HJFET with the excellent power performance.