Considerations for High-Efficiency Operation of Microwave Transistor Power Amplifiers

Yoichiro TAKAYAMA  

Publication
IEICE TRANSACTIONS on Electronics   Vol.E80-C   No.6   pp.726-733
Publication Date: 1997/06/25
Online ISSN: 
DOI: 
Print ISSN: 0916-8516
Type of Manuscript: INVITED PAPER (Special Issue on Microwave and Millimeterwave High-power Devices)
Category: 
Keyword: 
microwave power transistor,  microwave power amplifier,  power efficiency,  

Full Text: PDF>>
Buy this Article




Summary: 
Microwave power transistors for high efficiency applications are surveyed briefly. Methodologies for microwave transistor power amplifier circuit design are discussed. Microwave transistor power amplifiers are categorized according to their operation into classes A, AB, B, C, and F, and some preliminary results on output power, power efficiency, and power gain for the amplifiers in various classes are provided by an analysis using an ideal transistor model. Circuit conditions controlling the voltage and current waveforms and device parameters such as the knee voltage in the device current-voltage characteristics are discussed for viewpoint of realizing high-efficiency power amplifier operation. A practical power amplifier design is considered with respect to the device characteristics and circuit conditions.