Low Consumption Power Application of Pulse-Doped GaAs MESFET's

Nobuo SHIGA  Kenji OTOBE  Nobuhiro KUWATA  Ken-ichiro MATSUZAKI  Shigeru NAKAJIMA  

IEICE TRANSACTIONS on Electronics   Vol.E80-C   No.4   pp.597-603
Publication Date: 1997/04/25
Online ISSN: 
Print ISSN: 0916-8516
Type of Manuscript: PAPER
Category: Quantum Electronics
microwave and millimeter wave technology,  GaAs MESFET,  power amplifier,  low distortion,  low consumption power,  

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The application of pulse-doped GaAs MESFET's to a power amplifier module is discussed in this paper. The epitaxial layer structure was redesigned to have a dual pulse-doped structure for power applications, achieving a sufficient gate-drain brakdown voltage with excellent linearity. The measured load-pull characteristics of the redesigned device for the minimum power consumption design was presented. This device was shown to have almost twice the power-added efficiency of a conventional ion-implanted GaAs MESFET. Two kinds of power amplifiers were designed and fabricated, achieving Pout of 28.6 dBm at IM3 of -40 dBc with Pdc of 8 W and Pout of 33.0 dBm at IM3 of -40 dBc with Pdc of 32 W, respectively.