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A 167-MHz 1-Mbit CMOS Synchronous Cache SRAM
Hideharu YAHATA Yoji NISHIO Kunihiro KOMIYAJI Hiroshi TOYOSHIMA Atsushi HIRAISHI Yoshitaka KINOSHITA
IEICE TRANSACTIONS on Electronics
Publication Date: 1997/04/25
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Issue on Circuit Technologies for Memory and Analog LSIs)
CMOS, high speed, cache SRAM, chip floor plan, sense amplifier, output register, setup/hold time,
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A 167-MHz 1-Mbit CMOS synchronous cache SRAM was developed using 0.40-µm process technology. The floor plan was designed so that the address registers are located in the center of the chip, and high-speed circuits were developed such as the quasi latch (QL) sense amplifier and the one-shot control (OSC) output register. To maintain suitable setup and hold time margins, an equivalent margin (EM) design method was developed. 167-MHz operation was measured at a supply voltage of 2.5 V and an ambient temperature of 75. The same margins 1.1 ns of the setup time and hold time were measured for the specifications of a setup time of 2.0 ns and a hold time of 0.5 ns.