Temperature Dependence of Single Event Charge Collection in SOI MOSFETs by Simulation Approach

Tsukasa OOOKA
Hideyuki IWATA
Takashi OHZONE

IEICE TRANSACTIONS on Electronics   Vol.E80-C    No.3    pp.417-422
Publication Date: 1997/03/25
Online ISSN: 
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Issue on SOI Devices and Their Process Technologies)
SOI MOSFETs,  numerical simulation,  temperature dependence,  single event upset,  soft errors,  

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Heavy-ion-induced soft errors (single event upset) in submicron silicon-on-insulator (SOI) MOSFETs under space environmental conditions are studied over the temperature range of 100-400 K using three-dimensional device simulator with full-temperature models. The temperature dependence of the drain collected charge is examined in detail when a heavy-ion strikes the gate center perpendicularly. At very low temperatures, SOI MOSFETs have very high immunity to the heavy-ion-induced soft errors. In particular, alpha-particle-induced soft errors hardly occur at temperatures below 200 K. As the temperature increases, the collected charge shows a marked rate of increase. The problem of single event upset in SOI MOSFETs becomes more serious with increasing working temperature. This is because the induced bipolar mechanism is a main factor to cause charge collection in SOI MOSFETs and the bipolar current increases exponentially with increasing temperature. At room and high temperatures, the drain collected charge is strongly dependent on channel length and SOI film thickness.