Features of Ultimately Miniaturized MOSFETs/SOI: A New Stage in Device Physics and Design Concepts

Yasuhisa OMURA

IEICE TRANSACTIONS on Electronics   Vol.E80-C    No.3    pp.394-406
Publication Date: 1997/03/25
Online ISSN: 
Print ISSN: 0916-8516
Type of Manuscript: Special Section INVITED PAPER (Special Issue on SOI Devices and Their Process Technologies)
Category: Device and Process Technologies
SOI,  SIMOX,  MOSFET,  down-scaling,  ultra-thin,  

Full Text: PDF>>
Buy this Article

This paper describes what happens when the silicon layer is extremely thinned. The discussion shows that quantum mechanical short-channel effects impose limits on the down-scaling of MOSFET/SOI devices. However, thinning the silicon layer should bring new possibilities such as mobility enhancement, velocity overshoot enhancement, suppression of band-to-band tunneling, suppression of impact ionization and so on. Furthermore, the non-stationary energy transport in extremely miniaturized ultra-thin MOSFET/SOI devices is also addressed from the viewpoint of hot-carrier immunity. Related device physics are also discussed in order to consider the design methodology for contemporary MOSFET/SOI devices and new device applications for the future.