SMART-CUT(R): The Basic Fabrication Process for UNIBOND(R) SOI Wafers

A.J. AUBERTON-HERVE  Michel BRUEL  Bernard ASPAR  Christophe MALEVILLE  Hubert MORICEAU  

Publication
IEICE TRANSACTIONS on Electronics   Vol.E80-C   No.3   pp.358-363
Publication Date: 1997/03/25
Online ISSN: 
DOI: 
Print ISSN: 0916-8516
Type of Manuscript: INVITED PAPER (Special Issue on SOI Devices and Their Process Technologies)
Category: Wafer Technologies
Keyword: 
SOI,  UNIBOND(R),  Smart-Cut(R),  wafer bonding,  

Full Text: PDF>>
Buy this Article




Summary: 
The advantage of SOI wafers for device manufacture has been widely studied. To be a real challenger to bulk silicon, SOI producers have to offer SOI wafers in large volume and at low cost. The new Smart-Cut(R) SOI process used for the manufacture of the Unibond(R) SOI wafers answers most of the SOI wafer manufacturability issues. The use of Hydrogen implantation and wafer bonding technology is the best combination to get good uniformity and high quality for both the SOI and buried oxide layer. In this paper, the Smart-Cut(R) process is described in detail and material characteristics of Unibond(R) wafers such as crystalline quality, surface roughness, thin film thickness homogeneity, and electric behavior.