Integrated Tunable DBR Laser with EA-Modulator Grown by Selective Area MOVPE

Yukio KATOH  Koji YAMADA  Tatsuo KUNII  Yoh OGAWA  

IEICE TRANSACTIONS on Electronics   Vol.E80-C   No.1   pp.69-73
Publication Date: 1997/01/25
Online ISSN: 
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Issue on Devices, Packaging Technology, and Subsystems for the Optical Access Network)
WDM,  integrated laser,  DBR laser,  EA-modulator,  MQW,  selective area growth,  MOVPE,  

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A wavelength tunable DBR laser monolithically integrated with an EA-modulator as a WDM system light source was fabricated by selective area MOVPE growth. The lasing wavelength and band-gap energy were simultaneously controlled on the same epitaxial wafer by using a modulated grown thickness of InGaAsP/InGaAsP MQW layers. A wavelength tuning range of 3.5 nm, an output power of 3 mW, and an extinction ratio of 14 dB for 3 V were achieved. The measured 3 dB frequency bandwidth was 2 GHz. No significant change in modulation characteristics were observed when wavelength tuning by injecting the current into the DBR.