Performance of GaAs MESFET Photodetectors with Wide Drain-to-Gate Distances in Subcarrier Optical Transmission

Tatsuya SHIMIZU  Masashi NAKATSUGAWA  Hiroyuki OHTSUKA  

IEICE TRANSACTIONS on Electronics   Vol.E80-C   No.1   pp.160-167
Publication Date: 1997/01/25
Online ISSN: 
Print ISSN: 0916-8516
Type of Manuscript: PAPER
Category: Opto-Electronics
optically controlled MESFET,  drain-to-gate distance,  MMIC,  subcarrier optical transmission,  optical coupling efficiency,  

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This paper presents the performance of a proposed GaAs MESFET photodetector with wide drain-to-gate distances for improving the optical coupling efficiency in subcarrier optical transmission. Principle and design parameters of the proposed MESFET are described. Link gain, CNR, and BER, are experimentally investigated as functions of the drain-to-gate distance. It is experimentally found that the proposed MESFET improves the link gain by 8.5 dB compared to the conventional structure at the subcarrier frequency of 140 MHz. Discussions are also included compared to PIN-PD.