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Performance of GaAs MESFET Photodetectors with Wide Drain-to-Gate Distances in Subcarrier Optical Transmission
IEICE TRANSACTIONS on Electronics
Publication Date: 1997/01/25
Print ISSN: 0916-8516
Type of Manuscript: Category: Opto-Electronics
optically controlled MESFET, drain-to-gate distance, MMIC, subcarrier optical transmission, optical coupling efficiency,
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This paper presents the performance of a proposed GaAs MESFET photodetector with wide drain-to-gate distances for improving the optical coupling efficiency in subcarrier optical transmission. Principle and design parameters of the proposed MESFET are described. Link gain, CNR, and BER, are experimentally investigated as functions of the drain-to-gate distance. It is experimentally found that the proposed MESFET improves the link gain by 8.5 dB compared to the conventional structure at the subcarrier frequency of 140 MHz. Discussions are also included compared to PIN-PD.