A 40-Gbit/s Decision IC Fabricated with 0.12-µm GaAs MESFETs

Koichi MURATA  Taiichi OTSUJI  Mikio YONEYAMA  Masami TOKUMITSU  

Publication
IEICE TRANSACTIONS on Electronics   Vol.E80-C   No.12   pp.1624-1627
Publication Date: 1997/12/25
Online ISSN: 
DOI: 
Print ISSN: 0916-8516
Type of Manuscript: LETTER
Category: Electronic Circuits
Keyword: 
decision IC,  MESFET,  super-dynamic D-FF,  wideband amplifier,  

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Summary: 
The authors report on a 40-Gbit/s superdynamic decision IC fabricated with 0.12-µm GaAs MESFETs. The key to attaining high-speed decision IC is not only high-speed flip-flop circuits but also wideband input and output buffer circuits. 40 Gbit/s is the fastest operating speed of decision ICs fabricated with GaAs MESFETs.