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A 40-Gbit/s Decision IC Fabricated with 0.12-µm GaAs MESFETs
Koichi MURATA Taiichi OTSUJI Mikio YONEYAMA Masami TOKUMITSU
IEICE TRANSACTIONS on Electronics
Publication Date: 1997/12/25
Print ISSN: 0916-8516
Type of Manuscript: LETTER
Category: Electronic Circuits
decision IC, MESFET, super-dynamic D-FF, wideband amplifier,
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The authors report on a 40-Gbit/s superdynamic decision IC fabricated with 0.12-µm GaAs MESFETs. The key to attaining high-speed decision IC is not only high-speed flip-flop circuits but also wideband input and output buffer circuits. 40 Gbit/s is the fastest operating speed of decision ICs fabricated with GaAs MESFETs.