Low-Voltage Operation GaAs Receiver Front-End IC

Junji ITOH  Tadayoshi NAKATSUKA  Mitsuru NISHITSUJI  Tomoya UDA  Osamu ISHIKAWA  

IEICE TRANSACTIONS on Electronics   Vol.E80-C   No.12   pp.1592-1597
Publication Date: 1997/12/25
Online ISSN: 
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Issue on Low-Power and High-Speed LSI Technologies)
mobile communication,  front-end,  down-converter,  GaAs,  

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Low-voltage technology in front-end GaAs IC for mobile communication equipment will be presented. New techniques in combination with different threshold voltage (Vth) FETs for an amplifier and a mixer were investigated for low-voltage operation of the IC. The amplifier and mixer consist of a cascode connected to FETs with shallow and deep Vth. The best suitable distribution of the supply voltages was accomplished for each FETs by using a combination of different Vth, and excellent RF characteristics of the IC were obtained, even at low voltage operation. In addition, this front-end IC has a high image rejection ratio (IRR) without using an external image rejection filter, but by using high Q-value input and intermediate matching circuits. The fabrication process used an asymmetric self-aligned BP-LDD process and high dielectric constant (high-εr) on-chip bypass capacitors using SrTiO3 contributed to a reduction in dissipation current, chip size and parasitic reactance in the source wires. The fabricated IC showed a conversion gain (CG) of 23 dB, noise figure (NF) of 2.8 dB, 3rd order output intercept point (IP3out) of 3 dBm, image rejection ratio (IRR) over 20 dBc and LO to RF isolation over 25 dB, operating by 1.0 V single supply with dissipation current of 6.8 mA at 880 MHz. At 1.9 GHz, the IC also showed excellent RF characteristics with dissipation current of 6.5 mA at 1.0 V. The IC die is very small the size is 0.75 mm0.75 mm, and is molded in a mini-6pin plastic package.