A Buried-Channel Self-Aligned GaAs MESFET with High Power-Efficiency and Low Noise-Figure for 1.9-GHz Single-Chip Front-End MMICs

Kazuya NISHIHORI  Atsushi KAMEYAMA  Yoshiaki KITAURA  Yoshikazu TANABE  Masakatsu MIHARA  Misao YOSHIMURA  Mayumi HIROSE  Naotaka UCHITOMI  

IEICE TRANSACTIONS on Electronics   Vol.E80-C    No.12    pp.1586-1591
Publication Date: 1997/12/25
Online ISSN: 
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Issue on Low-Power and High-Speed LSI Technologies)
GaAs MESFET,  buried channel,  ion-implantation,  MMIC,  power-added efficiency,  noise figure,  

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We report on 1.9-GHz performance of the Buried-Channel self-aligned WN/W-gate GaAs MESFET (BC-MESFET) for use in digital mobile telephone handsets with low power consumption. The BC-MESFET incorporates undoped i-GaAs epitaxial-grown surface layer on the ion-implanted channel. Both the power and noise performance of the BC-MESFET are superior to the conventional MESFET. The 0.6-µm gate power BC-MESFET exhibits a high power-added efficiency of 57% at 1-dB gain compression, which leads to low power dissipation of the handset. This power performance is attributed to high breakdown voltage which the undoped i-GaAs surface layer has brought about. The BC-MESFET has also shown a minimum noise figure of below 0.4 dB. Taking the IC-oriented fabrication process of the BC-MESFET into consideration, these FET performances demonstrate that the BC-MESFET is suitable for the single-chip MMIC that integrates RF front-end blocks for the 1.9-GHz small-size mobile telephone handset with long battery lifetime.