For Full-Text PDF, please login, if you are a member of IEICE,|
or go to Pay Per View on menu list, if you are a nonmember of IEICE.
A Low Power Data Storage Circuit with an Intermittent Power Supply Scheme for Sub-1 V MT-CMOS LSIs
IEICE TRANSACTIONS on Electronics
Publication Date: 1997/12/25
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Issue on Low-Power and High-Speed LSI Technologies)
multiple-threshold, 1-volt, MT-CMOS, data storage circuit, SRAM, virtual power line, intermittent connection,
Full Text: PDF>>
An experimental latch circuit is fabricated by using a 0.35µm MT-CMOS technology. This latch circuit has a volume smaller by 30%, a delay time shorter by 10%, and has an active power consumption smaller by 10% over those of a conventional MT-CMOS circuit. Furthermore, at a operation frequency of 100 MHz, an SRAM employing this IPS scheme has a standby current which is 0.4% of SRAM's without using IPS scheme.