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Ferroelectric Field-Control in Pb(Zr0.52Ti0.48)O3/(Y0.6Pr0.4)Ba2Cu3Oy Heterostructures and Their Memory
Shigeki HONTSU Masaya NAKAMORI Hitoshi TABATA Junya ISHII Tomoji KAWAI
IEICE TRANSACTIONS on Electronics
Publication Date: 1997/10/25
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Issue on Basic Properties and Applications of Superconductive Electron Devices)
ferroelectric field effect, high-Tc superconductor, Pb(Zr0.52 Ti0.48)O3, laser ablation,
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Ferroelectric / superconducting heterostructures of Pb(Zr0.52Ti0.48)O3 [PZT] / (Y0.6Pr0.4)Ba2Cu3Oy [YPBCO] have been formed on SrTiO3(100) substrate using an ArF pulsed laser deposition. The crystallinity and surface morphology of heterostructures were investigated by X-ray diffraction measurements and atomic force microscopy. We also measured dielectric and ferroelectric properties of PZT film in the Au/PZT/YPBCO structure. Furthermore, we fabricated a three-terminal devices having the structure described above using an in-situ metal mask exchange system, and investigated the ferroelectric field effect. As a result, we observed a modulation of channel resistance approximately equal to that estimated from the induced carrier and memory effect due to remanent polarization of PZT.