Aiming for SIS Mixers Using Ba1-xKxBiO3 Bicrystal Junctions

Tetsuya TAKAMI  Ken'ichi KURODA  Yukihiko WADA  Morishige HIEDA  Yasuo TAMAI  Tatsuo OZEKI  

IEICE TRANSACTIONS on Electronics   Vol.E80-C    No.10    pp.1265-1268
Publication Date: 1997/10/25
Online ISSN: 
Print ISSN: 0916-8516
Type of Manuscript: Special Section INVITED PAPER (Special Issue on Basic Properties and Applications of Superconductive Electron Devices)
SIS mixer,  Ba1-xKxBiO3,  tunnel junction,  superconducting device,  

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A 90 GHz band planar-type superconducting mixer using Ba1-xKxBiO3 (BKBO) bicrystal junctions was fabricated on a MgO bicrystal substrate. The mixer is integrated with microwave circuits and two junctions, but we could not operate the mixer in image rejection mode because of process damage to the junction properties. However we confirmed the mixing operation; the intermediate frequency (IF) signal was observed up to 17K (LO87 GHz, RF92 GHz).