A New Description of MOS Circuits at Switch-Level with Applications

Massoud PEDRAM  Xunwei WU  

Publication
IEICE TRANSACTIONS on Fundamentals of Electronics, Communications and Computer Sciences   Vol.E80-A    No.10    pp.1892-1901
Publication Date: 1997/10/25
Online ISSN: 
DOI: 
Print ISSN: 0916-8508
Type of Manuscript: Special Section PAPER (Special Section on VLSI Design and CAD Algorithms)
Category: 
Keyword: 
MOS,  LSI,  pass-transistor logic,  switching theory,  low power design,  

Full Text: PDF>>
Buy this Article



Summary: 
After analyzing the limitations of the traditional description of CMOS circuits at the gate level, this paper introduces the notions of switching and signal variables for describing the switching states of MOS transistors and signals in CMOS circuits, respectively. Two connection operations for describing the interaction between MOS transistors and signals and a new description for MOS circuits at the switch level are presented. This new description can be used to express the functional relationship between inputs and the output at the switch level. It can also be used to describe the circuit structure composed of MOS switches. The new description can be effectively used to design both CMOS circuits and nMOS pass transistor circuits.