Effect of Silicone Vapour Concentration and Its Polymerization Degree on Electrical Contact Failure

Terutaka TAMAI  Mikio ARAMATA  

Publication
IEICE TRANSACTIONS on Electronics   Vol.E79-C   No.8   pp.1137-1143
Publication Date: 1996/08/25
Online ISSN: 
DOI: 
Print ISSN: 0916-8516
Type of Manuscript: PAPER
Category: Semiconductor Materials and Devices
Keyword: 
silicone,  electrical contacts,  silicone contamination,  contact failure,  polymerization degree,  Silicone vapour,  

Full Text: PDF>>
Buy this Article




Summary: 
The effect of silicone vapour concentration on the contact failure was examined by using micro relays and motor brush-slip ring(commutator) contacts, [(CH3) 2SiO]4: D4 was used as a vapour source of silicone contamination. Because the influence of the vapour of the silicone on the contact surface can not be avoided at all times due to its gradual evaporation in the atmosphere. The contact failure caused by the silicone vapour was confirmed as formation of SiO2 on the contact surfaceby analysis of EPMA and XPS. A minimum limiting concentration level which does not affect contact reliability was found. This limiting level was 10 ppm(O.13mg/l). Validity of the limiting level was confirmed by the relationships among concentration, temperature, SiO2 film thickness and contact resistance. Furthermore, the effect of the degree of silicone polymerization on the limiting concentration was derived by an empirical formula. This silicone is found to have polymerization degree larger than D7: n=7. These results were confirmed by the contact failure data due to the silicone contamination.