A 24 cm Diagonal TFT-LCD Fabricated Using a Simplified, Four-Photolithographic Mask Process

Kikuo ONO  Takashi SUZUKI  Hiroki SAKUTA  Kenichi ONISAWA  Minoru HIROSHIMA  Tooru SASAKI  Makoto TSUMURA  Nobutake KONISHI  

Publication
IEICE TRANSACTIONS on Electronics   Vol.E79-C   No.8   pp.1097-1102
Publication Date: 1996/08/25
Online ISSN: 
DOI: 
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Issue on Liquid-Crystal Displays)
Category: 
Keyword: 
silicide,  amorphous silicon,  thin film transistors,  liquid crystal display,  

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Summary: 
Amorphous silicon thin film transistors(a-Si TFTs) with a channel-etched structure were fabricated. The key technologies to realize these simple-process TFTs were 1) fabricating data lines and pixel electrodes of indium tin oxide(ITO); 2) carrying out tapered dry etching of plural layers of the a-Si and gate insulator silicon nitide; and 3) forming silicide layer to reduce the contact resistance between the phosphorousdoped a-Si and ITO. Excellent image quality, with a high contrast ratio of more than 100: 1, was obtained for video graphic array(VGA) mode TFT-LCDs using a dot inversion driving method. Furthermore, the transmission distribution was uniform with less than a 4.5% deviation on the whole display area although the ITO data line resistances were as large as 120 kΩ per line.