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A 24 cm Diagonal TFT-LCD Fabricated Using a Simplified, Four-Photolithographic Mask Process
Kikuo ONO Takashi SUZUKI Hiroki SAKUTA Kenichi ONISAWA Minoru HIROSHIMA Tooru SASAKI Makoto TSUMURA Nobutake KONISHI
IEICE TRANSACTIONS on Electronics
Publication Date: 1996/08/25
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Issue on Liquid-Crystal Displays)
silicide, amorphous silicon, thin film transistors, liquid crystal display,
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Amorphous silicon thin film transistors(a-Si TFTs) with a channel-etched structure were fabricated. The key technologies to realize these simple-process TFTs were 1) fabricating data lines and pixel electrodes of indium tin oxide(ITO); 2) carrying out tapered dry etching of plural layers of the a-Si and gate insulator silicon nitide; and 3) forming silicide layer to reduce the contact resistance between the phosphorousdoped a-Si and ITO. Excellent image quality, with a high contrast ratio of more than 100: 1, was obtained for video graphic array(VGA) mode TFT-LCDs using a dot inversion driving method. Furthermore, the transmission distribution was uniform with less than a 4.5% deviation on the whole display area although the ITO data line resistances were as large as 120 kΩ per line.