A 286 mm2 256 Mb DRAM with 32 Both-Ends DQ

Yohji WATANABE  Hing WONG  Toshiaki KIRIHATA  Dasisuke KATO  John K. DEBROSSE  Takahiko HARA  Munehiro YOSHIDA  Hideo MUKAI  Khandker N. QUADER  Takeshi NAGAI  Peter POECHMUELLER  Peter PFEFFERL  Matthew R. WORDEMAN  Shuso FUJII  

Publication
IEICE TRANSACTIONS on Electronics   Vol.E79-C   No.7   pp.978-985
Publication Date: 1996/07/25
Online ISSN: 
DOI: 
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Issue on the 1995 Symposium on VLSI Circuits (Joint Issue with the IEEE Journal of Solid-State Circuits, Vol.31, No.4 April 1996))
Category: Memory
Keyword: 


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Summary: 
This paper descriles a 256 Mb DRAM chip architecture which provides up to 32 wide organization. In order to minimize the die sixe, three new techniques: an exchangeable hierarchical data line structure, an irregular sense amp layout, and a split address bus with local redrive scheme in the both-ends DQ were introduced. A chip has been developed based on the architecture with 0.25µmCMOS technology. The chip measures 13.25mm21.55mm, which is the smallest 256 Mb DRAM ever reported. A row address strobe(RAS) access time of 26 ns was obtained under 2.8 V power supply and 85 . In addition, a 100 MHz32 page mode operation, namely 400 M byte/s data rate, in the standard extended data output(EDO) cycle has been succssfully demonstrated.