Improvement of Refresh Characteristics by SIMOX Technology for Giga-bit DRAMs

Takaho TANIGAWA  Akira YOSHINO  Hiroki KOGA  Shuichi OHYA  

IEICE TRANSACTIONS on Electronics   Vol.E79-C   No.6   pp.781-786
Publication Date: 1996/06/25
Online ISSN: 
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Issue on ULSI Memory Technology)
Category: Dynamic RAMs
refresh characteristics,  data retention time,  SIMOX,  DRAM,  

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Stacked capacitor dynamic random access memory(DRAM) cells with both NMOS and PMOS cell transistors(Lg=0.4µm) were fabricated on ultra-thin SIMOX(separation by implantation of oxygen) substrates, and the data retention time was compared with that of a bulk counterpart. A DATA retention time of 550 sec(at 25 ) could be achieved using ultra-thin SIMOX substrates, which is 6 times longer than that using the bulk substrate. A stacked capacitor cell with a PMOS cell transistor on an ultra-thin SIMOX substrate is very attractive and promising for future giga-bit DRAM cells.