Theoretical Study of Alpha-Particle-lnduced Soft Errors in Submicron SOI SRAM

Yoshiharu TOSAKA
Kunihiro SUZUKI
Shigeo SATOH
Toshihiro SUGII

IEICE TRANSACTIONS on Electronics   Vol.E79-C    No.6    pp.767-771
Publication Date: 1996/06/25
Online ISSN: 
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Issue on ULSI Memory Technology)
Category: Static RAMs
soft errors,  SOI SRAM, α-particle-induced bipolar current,  critical α-particle-induced initial charge,  soft error rate,  

Full Text: PDF>>
Buy this Article

The effects of α-particle-induced parasitic bipolar current on soft errors in submicron 6-transistor SOI SRAMs were numericaly studied. It was shown that the bipolar current induces soft errors and that there exists a critical quantity which determines the soft error occurrence in the SOI SRAMs. Simulated soft error rates were in the same order as those for bulk SRAMs.