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Theoretical Study of Alpha-Particle-lnduced Soft Errors in Submicron SOI SRAM
Yoshiharu TOSAKA Kunihiro SUZUKI Shigeo SATOH Toshihiro SUGII
IEICE TRANSACTIONS on Electronics
Publication Date: 1996/06/25
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Issue on ULSI Memory Technology)
Category: Static RAMs
soft errors, SOI SRAM, α-particle-induced bipolar current, critical α-particle-induced initial charge, soft error rate,
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The effects of α-particle-induced parasitic bipolar current on soft errors in submicron 6-transistor SOI SRAMs were numericaly studied. It was shown that the bipolar current induces soft errors and that there exists a critical quantity which determines the soft error occurrence in the SOI SRAMs. Simulated soft error rates were in the same order as those for bulk SRAMs.