Shallow p-Type Layers in Si by Rapid Vapor-Phase Doping for High-Speed Bipolar and MOS Applications

Yukihiro KIYOTA  Tohru NAKAMURA  Seiji SUZUKI  Taroh INADA  

IEICE TRANSACTIONS on Electronics   Vol.E79-C   No.4   pp.554-559
Publication Date: 1996/04/25
Online ISSN: 
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Issue on Ultra-High-Speed LSIs)
RVD,  shallow-junction bipolar,  MOS,  

Full Text: PDF>>
Buy this Article

Ultrashallow p-type layers have been formed using an one-wafer type reactor for rapid vapor-phase doping (RVD) with lamp annealing system. Bipolar and MOS transistors were fabricated using the system for the first time. The process includes the injection of the B2H6 diffusion source gas with hydrogen carrier gas at room temperature and rapid thermal annealing using lamps. Ultrashallow boron doping was achieved at 900 for 60 seconds; that is, the junction depths were less the 60 nm with a peak boron concentration of between 1019 and 1020 cm-3. The sheet boron concentrations is controlled by adjusting the flow rate of B2H6. To show the potential of the process, bipolar and MOS transistors were fabricated. The base regions of conventional bipolar transistors were formed by rapid vapor-phase doping. Transistors with 20-nm base and emitter were fabricated and they showed current gain of 150. Shallow source and drain of PMOS transistors were also formed. The threshold voltage roll-off was suppressed down to gate length of 0.22 µm, while devices with BF2-implanted source and drain showed the roll-off below 0.5 µm. Devices with RVD-source and drain thus have drain current 1.5 times higher than those with BF2 ion implantation. RVD provides both good short-channel characteristics and high current drivability.